Feedback mechanism for the stability of the band gap of CuInSe2

Levent Gütay, David Regesch, Jes K. Larsen, Yasuhiro Aida, Valérie Depredurand, Alex Redinger, Sabina Caneva, Susan Schorr, Christiane Stephan, Julien Vidal, Silvana Botti, and Susanne Siebentritt
Phys. Rev. B 86, 045216 – Published 27 July 2012

Abstract

We report on experimental results on band gap and lattice distortion in CuInSe2 for various degrees of Cu deficiency. The band gap is measured by optical methods, and the Cu vacancy density and anion displacement parameter are determined by neutron scattering. Our data show that the band gap decreases for Cu-poor compositions, and the anion displacement is weakly dependent on the concentration of Cu vacancies. This is in apparent contradiction with ab initio calculations that always predict a larger band gap in presence of Cu vacancies. To shed light on this issue, we studied the overall dependence of the band gap on the anion displacement and on the concentration of Cu vacancies using a self-consistent GW approach and hybrid functionals, including a feedback mechanism that was recently proposed. Our calculations illustrate consistently the remarkable stability of the band gap of chalcopyrite semiconductors and explain the experimental observations by a coupled effect of Cu vacancies and lattice distortions within the feedback model.

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  • Received 23 September 2011

DOI:https://doi.org/10.1103/PhysRevB.86.045216

©2012 American Physical Society

Authors & Affiliations

Levent Gütay1,*, David Regesch1, Jes K. Larsen1,†, Yasuhiro Aida1,‡, Valérie Depredurand1, Alex Redinger1, Sabina Caneva1, Susan Schorr2, Christiane Stephan2, Julien Vidal3, Silvana Botti4,5, and Susanne Siebentritt1

  • 1Laboratory for Photovoltaics, University of Luxembourg, Belvaux, Luxembourg
  • 2Helmholtz Center Berlin for Materials and Energy, Department Crystallography, Berlin, Germany
  • 3King's College London, Physics Department, WC2R 2LS London, United Kingdom
  • 4Laboratoire des Solides Irradiés and ETSF, École Polytechnique, CNRS, CEA-DSM, 91128 Palaiseau, France
  • 5Université de Lyon, F-69000 Lyon, France and LPMCN, CNRS, UMR 5586, Université Lyon 1, F-69622 Villeurbanne, France

  • *Corresponding author. levent.guetay@uni.lu
  • Present address: Institute of Energy Conversion, University of Delaware, Newark, USA.
  • Present address: Device Development Center, TDK Corporation, Ichikawa, Chiba, Japan.

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Issue

Vol. 86, Iss. 4 — 15 July 2012

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