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Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN
http://hdl.handle.net/10098/2226
http://hdl.handle.net/10098/222617369f60-f5ff-41e2-ac48-3089a4f6f2b7
名前 / ファイル | ライセンス | アクション |
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IPAP_Conf._Series_1_p.347-350.pdf (384.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-11-24 | |||||
タイトル | ||||||
タイトル | Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In drop | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | substrate surface | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | polarity | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MOVPE | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_1843 | |||||
資源タイプ | other | |||||
著者 |
ADACHI, Masato
× ADACHI, Masato× SEKI, Akihisa× HASHIMOTO, Akihiro× YAMAMOTO, Akio |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We report that In content included in high-temperature grown InN is markedly dependent on substrate surface before the growth. It is found that InN grown on 1000℃-grown GaN has a much higher In content compared with that on nitrided a-Al_2O_3 surface. A marked V/III-ratio dependence of In content is observed on the GaN surfaces, while such a dependence is scarcely found on the nitrided a-Al_2O_3 surface. Surface polarity of GaN and InN grown on it are found to be responsible for In drop formation. | |||||
書誌情報 |
Proceedings of International Workshop on Nitride Semiconductors p. 347-350, 発行日 2000-11-30 |
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出版者 | ||||||
出版者 | The Institute of Pure and Applied Physics | |||||
書誌レコードID | ||||||
識別子タイプ | NCID | |||||
関連識別子 | TD00006628 |