WEKO3
-
RootNode
アイテム
Photonic crystals and microdisk cavities based on GaInAsP-InP system
http://hdl.handle.net/10131/1301
http://hdl.handle.net/10131/13011c1d3fcc-a216-4193-a85b-e4b92fc95b91
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
97_3_3_808.pdf (1.4 MB)
|
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2007-08-09 | |||||||||
| タイトル | ||||||||||
| タイトル | Photonic crystals and microdisk cavities based on GaInAsP-InP system | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| キーワード | ||||||||||
| 主題 | GaInAsP-InP, Mechanical Efficiency, Pump, Water Turbine, Blower, Leakage, Disk Friction, Simple Formula, Turbo Machinery(en) | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 著者 |
馬場, 俊彦
× 馬場, 俊彦
|
|||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | This paper presents a preliminary guide to realize microcavity semiconductor lasers exhibiting spontaneous emission control effects. It includes: 1) theoretical consideration on the effects; 2) processing techniques for semiconductor microcavities; and 3) some demonstrations of photonic crystal and microdisk cavity. it was shown that, even with a spectral broadening of electron transition, thresholdless lasing operation and alternation of spontaneous emission rate are expected in a cavity satisfying the single made condition that only one mode is allowed in the transition spectrum. An ideal three-dimensional (3-D) photonic crystal has the potentiality for reciting this condition. In two-dimensional (2-D) crystals and microdisk cavities, thresholdless operation is also expected, but the alternation of spontaneous emission rate may be negligible due to the insufficient optical confinement. in the experiment, some processing techniques far GaInAsP-InP system were investigated and methane-based reactive ion beam etching was selected because of the smooth sidewalls and adaptability to arbitrary structures. A GaInAsP-InP 2-D photonic crystal constructed by submicron columns was fabricated using this method. Owing to the slow surface recombination of this material, a polarized photoluminescence and peculiar transmission spectra were observed at room temperature (RT), which can be explained by a photonic band calculation. However, some technical improvement is necessary for clear demonstration of photonic bandgap, which is minimally required for device applications. In contrast to this, a GaInAsP-InP microdisk cavity of 2 mu m in diameter, which corresponds to the cavity volume 2.5 times the single-mode condition, has achieved RT lasing with threshold current as law as 0.2 mA. Further reduction of dameter and realization of continuous-wave (CW) operation will provide a significant regime for the observation of spontaneous emission control effects. | |||||||||
| 言語 | en | |||||||||
| bibliographic_information |
en : IEEE Journal of Selected Topics in Quantum Electronics 巻 3, 号 3, p. 808-830, ページ数 23, 発行日 1997-06 |
|||||||||
| item_2_source_id_9 | ||||||||||
| 収録物識別子タイプ | PISSN | |||||||||
| 収録物識別子 | 1077260X | |||||||||
| item_2_source_id_11 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA11036333 | |||||||||
| item_2_relation_13 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1109/2944.640635 | |||||||||
| 権利 | ||||||||||
| 言語 | en | |||||||||
| 権利情報 | ©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 出版者 | ||||||||||
| 出版者 | Institute of Electrical and Electronics Engineers (IEEE) | |||||||||
