DSpace at KOASAS: Redistribution of Boron in Heavily Doped Silicon Grown by Silicon Molecular Beam Epitaxy : Dependence on Growth Temperature

DSpace at KOASAS

College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Redistribution of Boron in Heavily Doped Silicon Grown by Silicon Molecular Beam Epitaxy : Dependence on Growth Temperature

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Issue Date: 1992

Language: KOR

Citation: 한국물리학회, 92추계물리학회

URI: http://hdl.handle.net/10203/113416

Appears in Collection: MS-Conference Papers(학술회의논문)

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Redistribution of Boron in Heavily Doped Silicon Grown by Silicon Molecular Beam Epitaxy : Dependence on Growth Temperature

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