Fabrication of Self-aligned twofold epitaxial lateral overgrowth for highly efficient three-dimensional GaN based light emitting diodes
- Publisher
- Materials Research Society
- Issue Date
- 2018-11-15
- Language
- English
- Citation
International Workshop on Nitride Semiconductors (IWN 2018)
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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