Giga-Bit급 DRAM을 위한 고유전 (Ba,Sr)TiO3 박막 커패시터의 유전완화 특성에 대한 회로 모델A Circuit Model of the Dielectric Relaxation of the High Dielectric (Ba,Sr) TiO3 Thin Film Capacitor for Giga-Bit Scale DRAMs
- Publisher
- 대한전자공학회
- Issue Date
- 2000-04
- Language
- Korean
- Citation
전자공학회논문지, v.37, no.4, pp.253 - 262
- ISSN
- 1229-6368
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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