Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/105298
Title: | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode | Authors: | Iwan, S. Bambang, S. Zhao, J. L. Sun, L. Zhang, S. Ryu, H. H. Tan, Swee Tiam Fan, Hai Ming Sun, Xiaowei |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2012 | Source: | Iwan, S., Bambang, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, L., et al. (2012). Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode. Physica B : condensed matter, 407(14), 2721-2724. | Series/Report no.: | Physica B : condensed matter | Abstract: | Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. | URI: | https://hdl.handle.net/10356/105298 http://hdl.handle.net/10220/17751 |
ISSN: | 0921-4526 | DOI: | 10.1016/j.physb.2012.03.072 | Schools: | School of Electrical and Electronic Engineering School of Mechanical and Aerospace Engineering |
Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MAE Journal Articles |
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