{"_buckets": {"deposit": "5d98544b-1e10-4ffe-b6c8-5e8774bbf71a"}, "_deposit": {"created_by": 14, "id": "2000028", "owner": "14", "owners": [14], "owners_ext": {"displayname": "九工大 水野", "username": "mizuno_q_kodai"}, "pid": {"revision_id": 0, "type": "depid", "value": "2000028"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:02000028", "sets": ["24"]}, "author_link": ["16176"], "control_number": "2000028", "item_21_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2023-05-31", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "2455", "bibliographicPageStart": "2451", "bibliographic_titles": [{"bibliographic_title": "2023 IEEE Applied Power Electronics Conference and Exposition (APEC)"}]}]}, "item_21_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "This paper comprehensively investigates the high voltage insulated-gate bipolar transistor (IGBT) under short-circuit conditions, focusing on the impact of parasitic inductance. At first, the typical short-circuit performance of a 4.5 kV IGBT at different bias voltages is presented and the high equivalent parasitic inductance for the single-chip test is highlighted. Then, an appropriate bias voltage and fixed pulse time are selected as the test condition and the short circuit tests are performed with different values of parasitic inductance. The results show different gate-emitter voltage waveforms and short-circuit time durations. For comparison, the short-circuit test results of a 1.2 kV IGBT with different parasitic inductances are also included, which show consistent gate and current behaviour. A detailed analysis based on the TCAD simulation is included to explain this phenomenon.", "subitem_description_type": "Abstract"}]}, "item_21_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "2023 IEEE Applied Power Electronics Conference and Exposition (APEC 2023), March 19-23, 2023, Orlando, FL, USA", "subitem_description_type": "Other"}]}, "item_21_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_21_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1109/APEC43580.2023.10131377", "subitem_relation_type_select": "DOI"}}]}, "item_21_relation_9": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-6654-7539-6", "subitem_relation_type_select": "ISBN"}}, {"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-6654-7538-9", "subitem_relation_type_select": "ISBN"}}, {"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-6654-7540-2", "subitem_relation_type_select": "ISBN"}}]}, "item_21_rights_13": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (c) 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]}, "item_21_select_59": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_21_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "2470-6647", "subitem_source_identifier_type": "EISSN"}, {"subitem_source_identifier": "1048-2334", "subitem_source_identifier_type": "PISSN"}]}, "item_21_version_type_58": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Du, He", "creatorNameLang": "en"}]}, {"creatorAffiliations": [{"affiliationNameIdentifiers": [], "affiliationNames": [{"affiliationName": "", "affiliationNameLang": "ja"}]}], "creatorNames": [{"creatorName": "Omura, Ichiro", "creatorNameLang": "en"}, {"creatorName": "大村, 一郎", "creatorNameLang": "ja"}, {"creatorName": "オオムラ, イチロウ", "creatorNameLang": "ja-Kana"}], "familyNames": [{"familyName": "Omura", "familyNameLang": "en"}, {"familyName": "大村", "familyNameLang": "ja"}, {"familyName": "オオムラ", "familyNameLang": "ja-Kana"}], "givenNames": [{"givenName": "Ichiro", "givenNameLang": "en"}, {"givenName": "一郎", "givenNameLang": "ja"}, {"givenName": "イチロウ", "givenNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "16176", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "10510670", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000010510670"}, {"nameIdentifier": "7003814580", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7003814580"}, {"nameIdentifier": "69", "nameIdentifierScheme": "九工大研究者情報", "nameIdentifierURI": "https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}]}, {"creatorNames": [{"creatorName": "Matsumoto, Shuhei", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Arai, Takuro", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2023-08-03"}], "download_preview_message": "", "file_order": 0, "filename": "nperc235.pdf", "filesize": [{"value": "1.6 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1600000.0, "url": {"url": "https://kyutech.repo.nii.ac.jp/record/2000028/files/nperc235.pdf"}, "version_id": "67d7a0e0-4725-4af4-b56d-124b1eeddf58"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "IGBT", "subitem_subject_scheme": "Other"}, {"subitem_subject": "short circuit", "subitem_subject_scheme": "Other"}, {"subitem_subject": "reliability", "subitem_subject_scheme": "Other"}, {"subitem_subject": "parasitic inductance", "subitem_subject_scheme": "Other"}, {"subitem_subject": "TCAD simulation", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs", "subitem_title_language": "en"}]}, "item_type_id": "21", "owner": "14", "path": ["24"], "permalink_uri": "http://hdl.handle.net/10228/0002000028", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2023-08-03"}, "publish_date": "2023-08-03", "publish_status": "0", "recid": "2000028", "relation": {}, "relation_version_is_last": true, "title": ["Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs"], "weko_shared_id": -1}
Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs
http://hdl.handle.net/10228/0002000028
http://hdl.handle.net/10228/0002000028