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Ultra High Speed Short Circuit Protection for IGBT with Gate Charge Sensing
http://hdl.handle.net/10228/5795
http://hdl.handle.net/10228/5795e7cfbda0-66ee-465f-ac54-59e1d14d487f
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc2.pdf (414.0 kB)
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| Item type | 会議発表論文 = Conference Paper(1) | |||||||||||||
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| 公開日 | 2016-09-13 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||||
| 資源タイプ | conference paper | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Ultra High Speed Short Circuit Protection for IGBT with Gate Charge Sensing | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Yuasa, Kazufumi
× Yuasa, Kazufumi× Nakamichi, Soh× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Short circuit (SC) protection for IGBT has been crucial issue since IGBTs have become major switching devices for power electronics applications. According to the IGBT performance improvement, chip current density has been increased and the chip has become as thin as 100μm. The high current density and thin wafer chip result in high temperature rising speed during SC condition and hence high speed protection scheme for IGBT is highly required. Conventional methods, such as sense IGBT configuration, have the response time of 5 micro second, for example, which is not sufficient to protect advanced IGBTs. In this paper, we propose a novel protection method with response time shorter than 1 micro second. | |||||||||||||
| 備考 | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, International Conference Center Hiroshima, Hiroshima, Japan | |||||||||||||
| 書誌情報 |
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) p. 37-40, 発行日 2010-06 |
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| 出版社 | ||||||||||||||
| 出版社 | IEEE | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | IEEE | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 5570 | |||||||||||||
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Cite as
Yuasa, Kazufumi, Nakamichi, Soh, 大村, 一郎, 2010, Ultra High Speed Short Circuit Protection for IGBT with Gate Charge Sensing: IEEE, 37–40 p.
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