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| Título: | High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001) |
Autor: | Scigaj, Mateusz CSIC ORCID; Chao, C.H.; Gázquez, Jaume CSIC ORCID; Fina, Ignasi CSIC ORCID CVN ; Herranz, Gervasi CSIC ORCID; Fontcuberta, Josep CSIC ORCID; Sánchez Barrera, Florencio CSIC ORCID | Palabras clave: | Epitaxy Buffer layers Ferroelectric thin films Polarization X-ray diffraction |
Fecha de publicación: | 19-sep-2016 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 109(12): 122903 (2016) | Resumen: | The integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO3/LaNiO3/SrTiO3 heterostructure is grown monolithically on Si(001). The BaTiO3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm2. This result paves the way towards the fabrication of lead-free BaTiO3 ferroelectric memories on silicon platforms. | Descripción: | Scigaj, M. et al. | Versión del editor: | http://dx.doi.org/10.1063/1.4962836 | URI: | http://hdl.handle.net/10261/137196 | DOI: | 10.1063/1.4962836 | ISSN: | 0003-6951 |
| Aparece en las colecciones: | (ICMAB) Artículos |
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| Scigaj_APL_2016_postprint.pdf | 555,24 kB | Adobe PDF |  Visualizar/Abrir |
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