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Título: | Tunnel magnetoresistance in GaMnAs: Going beyond Jullière formula |
Autor: | Brey, Luis CSIC ORCID; Tejedor, C.; Fernández Rossier, J. | Fecha de publicación: | 13-sep-2004 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 85(11): 1996 (2004) | Resumen: | The relation between tunnel magnetoresistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin–orbit interactions. TMR is calculated using the Landauer approach. The materials are described in the 6 band k·p model which includes spin–orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of spin polarization and barrier thickness. As a result of the stong spin–orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula. | Descripción: | 3 pages, 3 figures. | Versión del editor: | http://dx.doi.org/10.1063/1.1789241 | URI: | http://hdl.handle.net/10261/20932 | DOI: | 10.1063/1.1789241 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (ICMM) Artículos |
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