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Título

Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

AutorDonchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, Andrés; Shtinkov, N.; Borisov, K.; Fuster, David CSIC ORCID ; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID
Palabras claveOptical properties
Quantum wire
III-V semiconductors
Fecha de publicación2-mar-2010
EditorInstitute of Physics Publishing
CitaciónJournal of Physics: Conference Series 210(1): 012041 (2010)
ResumenThe optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.
Versión del editorhttp://dx.doi.org/ 10.1088/1742-6596/210/1/012041
URIhttp://hdl.handle.net/10261/24386
DOI10.1088/1742-6596/210/1/012041
ISSN1742-6588
Aparece en las colecciones: (IMN-CNM) Artículos

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