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Título: | Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires |
Autor: | Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, Andrés; Shtinkov, N.; Borisov, K.; Fuster, David CSIC ORCID ; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID | Palabras clave: | Optical properties Quantum wire III-V semiconductors |
Fecha de publicación: | 2-mar-2010 | Editor: | Institute of Physics Publishing | Citación: | Journal of Physics: Conference Series 210(1): 012041 (2010) | Resumen: | The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated. | Versión del editor: | http://dx.doi.org/ 10.1088/1742-6596/210/1/012041 | URI: | http://hdl.handle.net/10261/24386 | DOI: | 10.1088/1742-6596/210/1/012041 | ISSN: | 1742-6588 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Donchev, V. et al J.of Phys. Conf. Ser._210_ 2010.pdf | 426,46 kB | Adobe PDF | Visualizar/Abrir |
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