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Título: | In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growth |
Autor: | González Sagardoy, María Ujué CSIC ORCID ; García Martínez, Jorge Manuel CSIC ORCID CVN ; González Sotos, Luisa CSIC ORCID ; Silveira, Juan Pedro CSIC; González Díez, Yolanda CSIC ORCID; Gómez, J. D.; Briones Fernández-Pola, Fernando CSIC | Palabras clave: | In situ stress measurements As/P exchange Nanostructures Heteroepitaxy Molecular beam epitaxy |
Fecha de publicación: | 13-mar-2002 | Editor: | Elsevier | Citación: | Applied Surface Science 188(1-2): 188-192 (2002) | Resumen: | Unintentional As/P exchange has a significant influence on InAs/InP nanostructures growth. In this paper, we report on the As/P exchange reactions at different temperatures studied by in situ stress measurements and reflectance difference (RD) characterization. When arsenic atoms are incorporated at the InP surface, an asymmetric stress is built up that is responsible for quantum wires (QWr) formation. We obtain that arsenic atoms do not actively displace phosphorous from the surface at the range of surface temperatures and exposure times of interest for growth of InAs nanostructures by molecular beam epitaxy (MBE). Instead, the arsenic atoms bind to available In atoms left vacant by phosphorous desorption at the corresponding temperature. | Descripción: | 5 páginas, 4 figuras.-- Comunicación oral presentada al E-MRS 2001 Spring Meeting, Symposium M; Stress and Strain in Heteroepitaxy celebrado en Estrasburgo (Francia/2001). | Versión del editor: | http://dx.doi.org/10.1016/S0169-4332(01)00744-9 | URI: | http://hdl.handle.net/10261/32066 | DOI: | 10.1016/S0169-4332(01)00744-9 | ISSN: | 0169-4332 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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paper in situ.pdf | 114,88 kB | Adobe PDF | Visualizar/Abrir |
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