Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

Wang, F; Gao, Q; Peng, K; Li, Z; Guo, Y; Fu, L; Smith, LM; Tan, HH; Jagadish, C

Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping

Wang, F

Gao, Q Peng, K Li, Z Guo, Y Fu, L Smith, LM Tan, HH Jagadish, C

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Publication Type:: Journal Article
Citation:: Nano Letters, 2015, 15 (5), pp. 3017 - 3023
Issue Date:: 2015-05-13

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Field	Value	Language
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Peng, K	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Smith, LM	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2015-05-13	en_US
dc.identifier.citation	Nano Letters, 2015, 15 (5), pp. 3017 - 3023	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117557
dc.description.abstract	© 2015 American Chemical Society. We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.	en_US
dc.relation.ispartof	Nano Letters	en_US
dc.relation.isbasedon	10.1021/nl504929n	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping	en_US
dc.type	Journal Article
utslib.citation.volume	5	en_US
utslib.citation.volume	15	en_US
utslib.for	MD Multidisciplinary	en_US
utslib.for	100705 Nanoelectronics	en_US
utslib.for	091299 Materials Engineering not elsewhere classified	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	5	en_US
pubs.publication-status	Published	en_US
pubs.volume	15	en_US

Abstract:

© 2015 American Chemical Society. We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

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http://hdl.handle.net/10453/117557