InP-based radial heterostructures grown on [100] nanowires

Fonseka, HA; Caroff, P; Guo, Y; Wang, F; Wong-Leung, J; Tan, HH; Jagadish, C

InP-based radial heterostructures grown on [100] nanowires

Fonseka, HA Caroff, P Guo, Y Wang, F

Wong-Leung, J Tan, HH Jagadish, C

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Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 168 - 170
Issue Date:: 2014-02-10

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Field	Value	Language
dc.contributor.author	Fonseka, HA	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Wong-Leung, J	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 168 - 170	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121222
dc.description.abstract	© 2014 IEEE. InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.	en_US
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038682	en_US
dc.title	InP-based radial heterostructures grown on [100] nanowires	en_US
dc.type	Conference Proceeding
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

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http://hdl.handle.net/10453/121222