Direct writing of single germanium vacancy center arrays in diamond

Zhou, Y; Mu, Z; Adamo, G; Bauerdick, S; Rudzinski, A; Aharonovich, I; Gao, WB

Direct writing of single germanium vacancy center arrays in diamond

Zhou, Y Mu, Z Adamo, G Bauerdick, S Rudzinski, A Aharonovich, I

Gao, WB

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Publication Type:: Journal Article
Citation:: New Journal of Physics, 2018, 20 (12)
Issue Date:: 2018-12-14

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Field	Value	Language
dc.contributor.author	Zhou, Y	en_US
dc.contributor.author	Mu, Z	en_US
dc.contributor.author	Adamo, G	en_US
dc.contributor.author	Bauerdick, S	en_US
dc.contributor.author	Rudzinski, A	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Gao, WB	en_US
dc.date.issued	2018-12-14	en_US
dc.identifier.citation	New Journal of Physics, 2018, 20 (12)	en_US
dc.identifier.issn	1367-2630	en_US
dc.identifier.uri	http://hdl.handle.net/10453/130104
dc.description.abstract	© 2018 The Author(s). Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge + ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.	en_US
dc.relation.ispartof	New Journal of Physics	en_US
dc.relation.isbasedon	10.1088/1367-2630/aaf2ac	en_US
dc.subject.classification	Fluids & Plasmas	en_US
dc.title	Direct writing of single germanium vacancy center arrays in diamond	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	20	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	02 Physical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	20	en_US

Abstract:

© 2018 The Author(s). Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge + ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.

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http://hdl.handle.net/10453/130104