Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO

Manyam, J; Ton-That, C; Phillips, MR

Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO

Manyam, J Ton-That, C

Phillips, MR

Permalink

Publisher:: AMER INST PHYSICS
Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2020, 127, (8)
Issue Date:: 2020-02-24

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Accepted versionAdobe PDF (2.11 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Manyam, J
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.contributor.author	Phillips, MR
dc.date.accessioned	2020-09-14T05:34:06Z
dc.date.available	2020-09-14T05:34:06Z
dc.date.issued	2020-02-24
dc.identifier.citation	Journal of Applied Physics, 2020, 127, (8)
dc.identifier.issn	0021-8979
dc.identifier.issn	1089-7550
dc.identifier.uri	http://hdl.handle.net/10453/142659
dc.description.abstract	© 2020 Author(s). Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873 K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28 eV and green luminescence (GL) at 2.39 eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving Z n i and V Zn pairs. The intensity of an orange luminescence centered at 2.01 eV was unaffected by the electric field and is assigned to substitutional Li acceptors.
dc.language	English
dc.publisher	AMER INST PHYSICS
dc.relation.ispartof	Journal of Applied Physics
dc.relation.isbasedon	10.1063/1.5134555
dc.rights	The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at https://aip.scitation.org/doi/10.1063/1.5134555
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering
dc.subject.classification	Applied Physics
dc.title	Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO
dc.type	Journal Article
utslib.citation.volume	127
utslib.for	01 Mathematical Sciences
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	open_access	*
dc.date.updated	2020-09-14T05:33:51Z
pubs.issue	8
pubs.publication-status	Published
pubs.volume	127
utslib.citation.issue	8

Abstract:

© 2020 Author(s). Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873 K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28 eV and green luminescence (GL) at 2.39 eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving Z n i and V Zn pairs. The intensity of an orange luminescence centered at 2.01 eV was unaffected by the electric field and is assigned to substitutional Li acceptors.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/142659