Diamond membranes for photonic devices

Bray, K; Regan, B; Aharonovich, I

Diamond membranes for photonic devices

Bray, K Regan, B Aharonovich, I

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Publisher:: ELSEVIER ACADEMIC PRESS INC
Publication Type:: Chapter
Citation:: Semiconductors and Semimetals, 2021, 104, pp. 173-217
Issue Date:: 2021-01-01

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Field	Value	Language
dc.contributor.author	Bray, K
dc.contributor.author	Regan, B
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.editor	Nebel, CE
dc.contributor.editor	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.editor	Mizuochi, N
dc.contributor.editor	Hatano, M
dc.date.accessioned	2022-03-31T04:51:03Z
dc.date.available	2022-03-31T04:51:03Z
dc.date.issued	2021-01-01
dc.identifier.citation	Semiconductors and Semimetals, 2021, 104, pp. 173-217
dc.identifier.isbn	9780323850247
dc.identifier.uri	http://hdl.handle.net/10453/155778
dc.description.abstract	To grasp a greater understanding and explore the various quantum technologies, it is imperative to efficiently fabricate a single crystalline material that can host bright point defects. Point defects or single photon sources are necessary to push the boundaries for quantum technologies, specifically, quantum telecommunications and quantum computing. This endeavor has led to several 1D, 2D and 3D platforms to be explored to test their applicability for the generation of pure single photon emitters (SPE). One of these platforms include diamond due to its wide bandgap and ability to host a variety of photostable, optically active group IV SPE defects at room temperature. Several diamond defects have been studied extensively, including the Nitrogen vacancy (NV), Silicon vacancy (SiV) and, recently, the Germanium vacancy (GeV) color centers and have all shown to be stable SPEs at room temperature. In addition to be an optically active single photon source, the defect additionally requires the ability to be electrically excited. Electrically pumping SPEs is highly desired for optoelectronic applications. These properties of diamond have led to several publications on the fabrication and characterization of optically and electrically excited 3D devices fabricated from diamond. This chapter delves into the fabrication of nanoscale, high aspect ratio conductive diamond membranes that can host group IV color centers. These structures demonstrate several key advantages which include scaling of emitter creation and ease of transfer between substrates.
dc.language	en
dc.publisher	ELSEVIER ACADEMIC PRESS INC
dc.relation.ispartof	Semiconductors and Semimetals
dc.relation.ispartofseries	Semiconductors and Semimetals
dc.relation.isbasedon	10.1016/bs.semsem.2020.08.002
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Diamond membranes for photonic devices
dc.type	Chapter
utslib.citation.volume	104
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-03-31T04:51:01Z
pubs.publication-status	Published
pubs.volume	104

Abstract:

To grasp a greater understanding and explore the various quantum technologies, it is imperative to efficiently fabricate a single crystalline material that can host bright point defects. Point defects or single photon sources are necessary to push the boundaries for quantum technologies, specifically, quantum telecommunications and quantum computing. This endeavor has led to several 1D, 2D and 3D platforms to be explored to test their applicability for the generation of pure single photon emitters (SPE). One of these platforms include diamond due to its wide bandgap and ability to host a variety of photostable, optically active group IV SPE defects at room temperature. Several diamond defects have been studied extensively, including the Nitrogen vacancy (NV), Silicon vacancy (SiV) and, recently, the Germanium vacancy (GeV) color centers and have all shown to be stable SPEs at room temperature. In addition to be an optically active single photon source, the defect additionally requires the ability to be electrically excited. Electrically pumping SPEs is highly desired for optoelectronic applications. These properties of diamond have led to several publications on the fabrication and characterization of optically and electrically excited 3D devices fabricated from diamond. This chapter delves into the fabrication of nanoscale, high aspect ratio conductive diamond membranes that can host group IV color centers. These structures demonstrate several key advantages which include scaling of emitter creation and ease of transfer between substrates.

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http://hdl.handle.net/10453/155778