Pure platinum nanostructures grown by electron beam induced deposition

Elbadawi, C; Toth, M; Lobo, CJ

Pure platinum nanostructures grown by electron beam induced deposition

Elbadawi, C Toth, M

Lobo, CJ

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Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2013, 5 (19), pp. 9372 - 9376
Issue Date:: 2013-10-18

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Field	Value	Language
dc.contributor.author	Elbadawi, C	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Lobo, CJ https://orcid.org/0000-0002-2746-1363	en_US
dc.date.issued	2013-10-18	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2013, 5 (19), pp. 9372 - 9376	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/26460
dc.description.abstract	Platinum has numerous applications in catalysis, nanoelectronics, and sensing devices. Here we report a method for localized, mask-free deposition of high-purity platinum that employs a combination of room-temperature, direct-write electron beam induced deposition (EBID) using the precursor Pt(PF3)4, and low temperature (≤400 C) postgrowth annealing in H2O. The annealing treatment removes phosphorus contaminants through a thermally activated pathway involving dissociation of H2O and the subsequent formation of volatile phosphorus oxides and hydrides that desorb during annealing. The resulting Pt is indistinguishable from pure Pt films by wavelength dispersive X-ray spectroscopy (WDS). © 2013 American Chemical Society.	en_US
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/am403167d	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Pure platinum nanostructures grown by electron beam induced deposition	en_US
dc.type	Journal Article
utslib.citation.volume	19	en_US
utslib.citation.volume	5	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	19	en_US
pubs.publication-status	Published	en_US
pubs.volume	5	en_US

Abstract:

Platinum has numerous applications in catalysis, nanoelectronics, and sensing devices. Here we report a method for localized, mask-free deposition of high-purity platinum that employs a combination of room-temperature, direct-write electron beam induced deposition (EBID) using the precursor Pt(PF3)4, and low temperature (≤400 C) postgrowth annealing in H2O. The annealing treatment removes phosphorus contaminants through a thermally activated pathway involving dissociation of H2O and the subsequent formation of volatile phosphorus oxides and hydrides that desorb during annealing. The resulting Pt is indistinguishable from pure Pt films by wavelength dispersive X-ray spectroscopy (WDS). © 2013 American Chemical Society.

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http://hdl.handle.net/10453/26460