The Effect Of Microscopic Texture On The Direct Plasma Surface Passivation Of Si Solar Cells

Mehrabian, S; Xu, S; Qaemi, A; Shokri, B; Chan, C; Ostikov, K

The Effect Of Microscopic Texture On The Direct Plasma Surface Passivation Of Si Solar Cells

Mehrabian, S Xu, S Qaemi, A Shokri, B Chan, C Ostikov, K

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Publisher:: Amer Inst Physics
Publication Type:: Journal Article
Citation:: Mehrabian, S et al. 2013, 'The Effect Of Microscopic Texture On The Direct Plasma Surface Passivation Of Si Solar Cells', Physics Of Plasmas, vol. 20, no. 4, pp. 043502-1-043502-6.
Issue Date:: 2013

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Field	Value	Language
dc.contributor.author	Mehrabian, S	en_US
dc.contributor.author	Xu, S	en_US
dc.contributor.author	Qaemi, A	en_US
dc.contributor.author	Shokri, B	en_US
dc.contributor.author	Chan, C	en_US
dc.contributor.author	Ostikov, K	en_US
dc.date.accessioned	2014-05-18T18:05:27Z
dc.date.available	2014-05-18T18:05:27Z
dc.date.issued	2013	en_US
dc.identifier	2012004111	en_US
dc.identifier.citation	Mehrabian, S et al. 2013, 'The Effect Of Microscopic Texture On The Direct Plasma Surface Passivation Of Si Solar Cells', Physics Of Plasmas, vol. 20, no. 4, pp. 043502-1-043502-6.	en_US
dc.identifier.issn	1070-664X	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/27858
dc.description.abstract	Textured silicon surfaces are widely used in manufacturing of solar cells due to increasing the light absorption probability and also the antireflection properties. However, these Si surfaces have a high density of surface defects that need to be passivated. In this study, the effect of the microscopic surface texture on the plasma surface passivation of solar cells is investigated. The movement of 105?H+ ions in the texture-modified plasma sheath is studied by Monte Carlo numerical simulation. The hydrogen ions are driven by the combined electric field of the plasma sheath and the textured surface. The ion dynamics is simulated, and the relative ion distribution over the textured substrate is presented. This distribution can be used to interpret the quality of the Si dangling bonds saturation and consequently, the direct plasma surface passivation.	en_US
dc.publisher	Amer Inst Physics	en_US
dc.relation.ispartof	Verified OK	en_US
dc.relation.ispartof	Physics Of Plasmas	en_US
dc.relation.isbasedon	http://dx.doi.org/10.1063/1.479852	en_US
dc.subject	CRYSTALLINE SILICON; AMORPHOUS-SILICON; NANOWIRES; TMAH; RECOMBINATION; HYDROGEN; TRANSPORT; GROWTH	en_US
dc.subject.classification	Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
dc.title	The Effect Of Microscopic Texture On The Direct Plasma Surface Passivation Of Si Solar Cells	en_US
dc.type	Journal article
utslib.citation.volume	20	en_US
utslib.citation.number	4	en_US
utslib.location	Melville	en_US
utslib.citation.startpage	043502-1	en_US
utslib.citation.endpage	043502-6	en_US
utslib.identifier.org	SCI.Faculty of Science	en_US
utslib.for	020200	en_US
utslib.percentage	100	en_US
utslib.copyright.status	closed_access

Abstract:

Textured silicon surfaces are widely used in manufacturing of solar cells due to increasing the light absorption probability and also the antireflection properties. However, these Si surfaces have a high density of surface defects that need to be passivated. In this study, the effect of the microscopic surface texture on the plasma surface passivation of solar cells is investigated. The movement of 105?H+ ions in the texture-modified plasma sheath is studied by Monte Carlo numerical simulation. The hydrogen ions are driven by the combined electric field of the plasma sheath and the textured surface. The ion dynamics is simulated, and the relative ion distribution over the textured substrate is presented. This distribution can be used to interpret the quality of the Si dangling bonds saturation and consequently, the direct plasma surface passivation.

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http://hdl.handle.net/10453/27858