In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
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Date
2008
Authors
O'Connor, Éamon
Long, Rathnait D.
Cherkaoui, Karim
Thomas, Kevin K.
Chalvet, Francis N.
Povey, Ian M.
Pemble, Martyn E.
Hurley, Paul K.
Brennan, B.
Hughes, Gregory
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Volume Title
Publisher
AIP Publishing
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Abstract
We have studied an in situ passivation of In(0.53)Ga(0.47)As, based on H(2)S exposure (50-350 degrees C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO(2) using Hf[N(CH(3))(2)](4) and H(2)O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H(2)S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In(0.53)Ga(0.47)As epitaxial layer and the amorphous HfO(2) resulting from the in situ H(2)S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO(2)/In(0.53)Ga(0.47)As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 degrees C H(2)S at the end of the metal-organic vapor-phase epitaxy In(0.53)Ga(0.47)As growth are comparable to those obtained using an ex situ aqueous (NH(4))(2)S passivation. (c) 2008 American Institute of Physics. (DOI: 10.1063/1.2829586)
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Keywords
Gaas , Hydrogen , Surface , Films , Passivation , III-V semiconductors , Atomic layer deposition , Surface passivation , X-ray photoelectron spectroscopy
Citation
O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902. doi: 10.1063/1.2829586
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© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2829586