Positron lifetime measurements on neutron‐irradiated InP crystals

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43. Journal of Applied Physics, 79 (1996) Navarro.pdf (78.93 KB)
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URI: http://hdl.handle.net/10550/12947
DOI: 10.1063/1.362637
URL: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000079000012009043000001&idtype=cvips&prog=normal&doi=10.1063/1.362637
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1996
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Abstract
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals.
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Indium Phosphides ; Radiation Effects ; Thermal Neutrons ; Monocrystals ; Positron Probes ; Lifetime ; Defect Structure
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NAVARRO, F.J. ; DAMONTE, L.C. ; MARÍ, B. ; FERRERO, J.L. Positron lifetime measurements on neutron‐irradiated InP crystals. En: Journal of Applied Physics, 1996, vol. 79, no. 12
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http://hdl.handle.net/10550/12947
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22 - Física