Kinetic Monte Carlo simulations of Si/Si(111) 7x7 homoepitaxy

0132720 - FZU-D 20000276 RIV CZ eng J - Článek v odborném periodiku
Mysliveček, J. - Jarolímek, T. - Šmilauer, Pavel
Kinetic Monte Carlo simulations of Si/Si(111) 7x7 homoepitaxy.
Czechoslovak Journal of Physics. Roč. 49, č. 11 (1999), s. 1605-1612. ISSN 0011-4626.
[Symposium on Surface Physics /8./. Třešť, 28.06.1999-02.07.1999]
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.328, rok: 1999

It is presented a kinetic Monte Carlo model of Si/Si(111)7X7 homoepitaxy and is shown that this model successfully reproduces available experimental results obtained during initial stages of growth and during surface relaxation.
Trvalý link: http://hdl.handle.net/11104/0000583