Effect of Fe inter-diffusion on the properties of InP laeyrs grown with addition of RE elements

0105886 - URE-Y 20040049 FR eng A - Abstrakt
Procházková, Olga - Žďánský, Karel - Zavadil, Jiří
Effect of Fe inter-diffusion on the properties of InP laeyrs grown with addition of RE elements.
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2004. [Montpellier]: [GES], 2004. s. 42-43.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. 01.06.2004-04.06.2004, Montpellier]
Grant CEP: GA AV ČR(CZ) KSK1010104
Klíčová slova: rare earth compounds * liqiud phase epitaxial growth * indium compounds
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The contribution reports the diffusion of Fe into InP layers grown by LPE technique on SI-InP:Fe substrates with addition of rare earth /RE/ element into grown melt. The role of various RE elements is demonstrated together with the possibility to suppress the Fe diffusion other then by lowering the growth temperature. We have studied the behaviour of Fe by varying the conductivity type and the nature of the grown adjacent InP layers for different concentrations of Fe in SI-InP:Fe and growth conditions. The work benefits from the extraordinary properties of RE elements.
Trvalý link: http://hdl.handle.net/11104/0013074