Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

0132974 - FZU-D 20000333 RIV NL eng J - Článek v odborném periodiku
Nakahata, K. - Kamiya, T. - Fortmann, C. M. - Shimizu, I. - Stuchlíková, Hana - Fejfar, Antonín - Kočka, Jan
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
Journal of Non-Crystalline Solids. 266-269, - (2000), s. 341-346. ISSN 0022-3093. E-ISSN 1873-4812
Grant CEP: GA AV ČR IAA1010809; GA ČR GA202/98/0669
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.269, rok: 2000

Structural and transport anisotropy of low temperature polycrystalline silicon were studied. Poly-Si films with (220) preferential orientation were fabricated by very-high-frequency chemical vapor deposition from SiF4 and H2 mixtures.
Trvalý link: http://hdl.handle.net/11104/0030966