Počet záznamů: 1
InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
- 1.0134200 - FZU-D 20030093 RIV NL eng J - Článek v odborném periodiku
Hazdra, P. - Voves, J. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav
InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy.
Journal of Crystal Growth. Roč. 248, - (2003), s. 328-332. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA AV ČR IAA1010806
Výzkumný záměr: CEZ:AV0Z1010914; CEZ:MSM 212300014
Klíčová slova: electroluminescence * isovalent .delta.-layers * photocurrent spectroscopy * MOVPE * InAs/GaAs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.414, rok: 2003
Photocurrent, electroluminescence, and photoluminescence spectroscopy were used for the characterisation of laser structures containing InAs .delta.-layers in GaAs matrix surrounded by AlGaAs waveguide and grown by low-pressure metal organic vapour phase epitaxy.
Trvalý link: http://hdl.handle.net/11104/0032116
Počet záznamů: 1