Electron Backscattering from Real and In-Situ Treated Surfaces

0205235 - UPT-D 20000011 RIV AT eng J - Článek v odborném periodiku
Frank, Luděk - Steklý, Richard - Zadražil, Martin - El Gomati, M. M. - Müllerová, Ilona
Electron Backscattering from Real and In-Situ Treated Surfaces.
Microchimica Acta. Roč. 132, 2-4 (2000), s. 179-188. ISSN 0026-3672. E-ISSN 1436-5073
Grant CEP: GA AV ČR IAA1065901; GA ČR GA202/99/0008
Výzkumný záměr: CEZ:AV0Z2065902
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.303, rok: 2000

Significant differences in backscattered electron yields exist between the surfaces cleaned by methods used in electron microscopy and spectroscopy. These differences have been observed for Au, Cu and Al specimens, and are interpreted on the basis simulated BSE yields. Composition and thickness of the surface contamination layers, responsible for the differences, are estimated. The results (7 nm of carbon on Au or 3 nm of oxide on AL) remain within expectation and indicate that the BSE yield measurement and BSE images should be interpreted cautiously. Peculiar results are obtained for Cu, perhaps due to a different cleaning procedure. A new concept of an information depth for the BSE signal is introduced as a depth within which the total BSE yield can be modelled as composed of the yields of layers proportional to their thickness weighted by the escape depths. This concept proved satisfactory for thin surface layers and brought the information depth values 2 to 4 times smaller than first estimated, i.e. half the penetration depth.
Trvalý link: http://hdl.handle.net/11104/0100853