Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology

0205322 - UPT-D 20000101 RIV CZ eng J - Článek v odborném periodiku
Hutař, Otakar - Oral, Martin - Müllerová, Ilona - Romanovský, Vladimír
Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology.
Jemná mechanika a optika. Roč. 45, č. 10 (2000), s. 271-272. ISSN 0447-6441
Grant CEP: GA AV ČR IBS2065017
Výzkumný záměr: CEZ:AV0Z2065902
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The low energy backscattered electron (BSE) detector, equipped with an electrostatic immersion lens for the retardation of the primary electron beam (PE) was elaborated and used for the imaging of surface semiconductor device specimens in a commercial SEM. Despite the signal of BSE is generally lower than that obtained using secondary electrons (SE), the achieved results predestine this BSE detection method as a suitable tool for the inspection of fine structures of semiconductor devices and linewidth measurements of critical dimensions (CD).
Trvalý link: http://hdl.handle.net/11104/0100937