The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers

0303870 - URE-Y 20010052 PL eng A - Abstrakt
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers.
Warsaw: Polish Academy of Sciences, Institute of Physics, 2001. Jaszowiec 2001. s. 59
[International School on the Physics of Semiconducting Compounds /30./. 01.06.2001-08.06.2001, Ustron-Jaszowiec]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The behaviour and the impact of individual rare-earth elements (REE) used in the InP LPE growth process were compared. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presentace of REE. The dislocation density was reduced by a half order of magnitude. The concentration of shallow impurities was reduced by up to three orders of magnitude. When increasing the concentration of Pr or Tb in the growth melt the reversal of electrical conductivity occurs.
Trvalý link: http://hdl.handle.net/11104/0114054