Quantum confinement in InAs/GaAs systems with self-assembled quantum dots grown using in-flush technique

0373389 - FZÚ 2012 RIV PL eng J - Článek v odborném periodiku
Molas, M. - Kuldová, Karla - Borysiuk, J. - Wasilewski, Z. - Babinski, A.
Quantum confinement in InAs/GaAs systems with self-assembled quantum dots grown using in-flush technique.
Acta Physica Polonica A. Roč. 119, č. 5 (2011), 624-626. ISSN 0587-4246. E-ISSN 1898-794X.
[Conference on the Physics of Semiconductors /39./. Krynica-Zdroj, 19.06.2010-24.06.2010]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: quantum dots * InAs/GaAs * microphotoluminescence * In-flush technique
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.444, rok: 2011

The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots by the microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. The In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
Trvalý link: http://hdl.handle.net/11104/0206498