Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges

0373839 - FZÚ 2012 RIV DE eng J - Článek v odborném periodiku
Straňák, V. - Wulff, H. - Bogdanowicz, R. - Drache, S. - Hubička, Zdeněk - Čada, Martin - Tichý, M. - Hippler, R.
Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges.
European Physical Journal D. Roč. 64, 2-3 (2011), 427-435. ISSN 1434-6060. E-ISSN 1434-6079
Grant CEP: GA ČR(CZ) GAP205/11/0386; GA ČR GP202/09/P159; GA AV ČR KAN301370701; GA MŠMT(CZ) 1M06002
Grant ostatní: AVČR(CZ) M100100915
Výzkumný záměr: CEZ:AV0Z10100522
Klíčová slova: dual magnetron * Ti-Cu film * HiPIMS * diagnostics * ion energy
Kód oboru RIV: BH - Optika, masery a lasery
Impakt faktor: 1.476, rok: 2011

Properties of different methods of magnetron sputtering (dc-MS, dual-MS and dual-HiPIMS) are studied and compared with respect to intermetallic Ti-Cu film formation. The quality and features of thin films are strongly influenced by the energy of incoming particles. The ion velocity distribution functions (IVDFs) were measured by time-resolved retarding field analyzer (RFA) in the substrate position. Thin films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD) and X-ray reflectometry (XR). It was found that IVDFs measured in pulsed discharges exhibit double-peak distribution. The IVDFs reach the maximum at ion energies about ~8 eV. The ion saturated current is highest in dual-HiPIMS discharge (~5 μA/cm2) and is mostly represented by Cu+ and Ar+ ions. The mode of sputtering influences chemical composition. The copper forms polycrystalline fcc-phase while much smaller Ti particles enwraps the copper crystallites or are part of a solid solution.
Trvalý link: http://hdl.handle.net/11104/0206899