Scintillation properties of Ce doped Gd.sub.2./sub.Lu.sub.1./sub.(Ga,Al).sub.5./sub.O.sub.12./sub. single crystal grown by the micro-pulling-down method

0379857 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Kamada, K. - Yanagida, T. - Pejchal, Jan - Nikl, Martin - Endo, T. - Tsutumi, K. - Usuki, Y. - Fujimoto, Y. - Fukabori, A. - Yoshikawa, A.
Scintillation properties of Ce doped Gd₂Lu₁(Ga,Al)₅O₁₂ single crystal grown by the micro-pulling-down method.
Journal of Crystal Growth. Roč. 352, č. 1 (2012), s. 35-38. ISSN 0022-0248. E-ISSN 1873-5002
Grant ostatní: AV ČR(CZ) M100100910
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: single crystal growth * oxides * scintillator materials
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.552, rok: 2012

Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mmφx1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns.
Trvalý link: http://hdl.handle.net/11104/0210722