Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

0395132 - ÚFE 2014 RIV GB eng J - Článek v odborném periodiku
Yatskiv, Roman - Grym, Jan
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes.
Semiconductor Science and Technology. Roč. 28, č. 5 (2013). ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA MŠMT LD12014
Institucionální podpora: RVO:67985882
Klíčová slova: Gallium nitride * Schottky barrier diodes * Graphite
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 2.206, rok: 2013

The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 × 107 and 1.9 × 1011 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.
Trvalý link: http://hdl.handle.net/11104/0223260