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EPR study of the nitrogen containing defect center created in selfassembled 6H SiC nanostructure
- 1.0396199 - FZÚ 2014 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Kalabukhova, E.N. - Savchenko, Dariia - Shanina, B.D. - Bagraev, N. - Klyachkin, L. - Malyarenko, A.
EPR study of the nitrogen containing defect center created in selfassembled 6H SiC nanostructure.
Silicon Carbide and Related Materials 2012. Zurich: Trans Tech Publications Ltd, 2013 - (Lebedev, A.; Davydov, S.; Ivanov, P.; Levinshtein, M.), s. 389-392. Materials Science Forum, 740-742. ISSN 0255-5476.
[9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012). St Petersburg (RU), 02.09.2012-06.09.2012]
Grant ostatní: SAFMAT(XE) CZ.2.16/3.1.00/22132
Institucionální podpora: RVO:68378271
Klíčová slova: VSiNC pair * self-assembled 6H SiC nanostructure * EPR
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://www.scientific.net/MSF.740-742.389
Triplet center with spin state S = 1 is detected in the EPR spectrum of the self-assembled 6H SiC nanostructure obtained by non-equilibrium boron diffusion into the n-type 6H SiC epitaxial layer (EL) under conditions of the controlled injection of the silicon vacancies at the temperature of T = 9000C. From the analysis of the angular dependences of the EPR spectrum and the numerical diagonalization of the spin Hamiltonian, the value of the zero-field splitting constant D and g-factor are found to be D = 1140·10-4 cm-1 and g|| = 1.9700, g(perpendicular to) = 1.9964. Based on the hyperfine (hf) structure of the defect originating from the hf interaction with one 14N nuclei, the large value of the zero-field splitting constant D and technological conditions of the boron diffusion into the n-type 6H SiC EL, the triplet center is tentatively assigned to the defect center consisting of nitrogen atom and silicon vacancy.
Trvalý link: http://hdl.handle.net/11104/0224007
Počet záznamů: 1