Photoluminescence and excited state structure of Bi.sup.3+./sup.-related centers in Lu.sub.2./sub.SiO.sub.5./sub.:Bi single crystalline films

0396559 - FZÚ 2014 RIV NL eng J - Článek v odborném periodiku
Gorbenko, V. - Krasnikov, A. - Mihóková, Eva - Nikl, Martin - Zazubovich, S. - Zorenko, Y.
Photoluminescence and excited state structure of Bi³⁺-related centers in Lu₂SiO₅:Bi single crystalline films.
Journal of Luminescence. Roč. 134, Feb (2013), s. 469-476. ISSN 0022-2313. E-ISSN 1872-7883
Grant CEP: GA ČR GAP204/12/0805
Institucionální podpora: RVO:68378271
Klíčová slova: Bi³⁺-doped oxyorthosilicate * time-resolved spectroscopy * luminescence * scintillation materials
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.367, rok: 2013

Single crystalline films of Lu2SiO5:Bi,prepared by the liquid phase epitaxy method from the melt-solution based on Bi2O3 flux, are studied at 4.2–350 K by the time-resolved spectroscopy methods under excitation in the 2.4–6.2 eV energy range. An intense dominant ultraviolet luminescence of Lu2SiO5:Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state(RES)of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion,respectively. Characteristic parameters of the triplet RES,in particular the energy separation between the excited states and the rates of the radiative and non-radiative transitions from these states, are determined.
Trvalý link: http://hdl.handle.net/11104/0224315