Perspectives and challenges in "Diamond-on-GaN" technology

0424372 - FZÚ 2014 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Ižák, Tibor - Jirásek, Vít - Vanko, G. - Babchenko, Oleg - Varga, Marián - Kromka, Alexander
Perspectives and challenges in "Diamond-on-GaN" technology.
Perspektívne vákuové metódy a technológie (Perspective vacuum methods and technologies). Bratislava: Slovenská vákuová spoločnosť, 2013 - (Vojs, M.; Veselý, M.; Vincze, A.), s. 37-41. ISBN 978-80-971179-2-4.
[School of Vacuum Technology /16./ (Perspektívne vákuové metódy a technológie. Perspective vacuum methods and technologies). Štrbské Pleso (SK), 10.10.2013-13.10.2013]
Grant CEP: GA ČR(CZ) GBP108/12/G108; GA MPO FR-TI2/736
Institucionální podpora: RVO:68378271
Klíčová slova: diamond films * HEMT transistors * GaN * high power devices
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

This article deals with growth of diamond thin films on GaN substrates. First, Diamond-on-GaN structures are pointed out as a promising electronic material with variety of applications. From the practical point of view, diamond thin films are shown as an attractive solution to the limited use of monocrystalline diamond substrates. For this purpose, some technological requirements on the diamond thin film growth on GaN substrates are stressed too; i.e. the topics as thermally - induced stresses, aggressive process conditions or growth of diamond films, demand on the low temperature diamond deposit ion, selective area deposition, spontaneous nucleation of diamond, diffusion of carbon atoms, etc. The experimental part of our study focuses on the direct growth of polycrystalline diamond films on AlGaN/GaN high electron mobility transistors (HEMTs) related to aforementioned technological challenges.
Trvalý link: http://hdl.handle.net/11104/0230450