Light trapping in thin film silicon solar cells by Raman spectroscopy

0424580 - FZÚ 2014 JP eng A - Abstrakt
Ganzerová, Kristína - Ledinský, Martin - Fejfar, Antonín - Kočka, Jan
Light trapping in thin film silicon solar cells by Raman spectroscopy.
2nd International Education Forum on Enviroment and Energy Science - Abstracts. Tokyo: ACEEES, Tokyo Institute of Technology, 2013. s. 1-2.
[International Education Forum on Enviroment and Energy Science /2./. 13.12.2013-17.12.2013, Los Angeles]
Grant CEP: GA MPO FR-TI2/736; GA MŠMT(CZ) LM2011026
Grant ostatní: AVČR(CZ) M100101216; AV ČR(CZ) M100101217
Institucionální podpora: RVO:68378271
Klíčová slova: Raman spectroscopy * thin film
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In article [3] was shown that the absolute intensity of Raman spectra excited by 785 nm laser is strongly affected by scattering in the rough substrate surface. This effect is caused by rough substrate, where photons are scattered under wide angles, then reflected in layer, resulting in extended path in absorbing material, see Figure 1. Mean photon path length in sample can be even several times increased by light trapping in the layer. As the probability of Raman interaction is directly proportional to the mean photon paths in the layer, this path extension is directly proportional to Raman intensity. Therefore, Raman spectroscopy measured at 785 nm excitation wavelength may be used to determine light trapping in µc-Si layer.
Trvalý link: http://hdl.handle.net/11104/0230648