Lattice-mismatched epitaxial growth on porous III-V substrates

0437411 - ÚFE 2015 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Grym, Jan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Dimitrakopulos, G.P. - Bazioti, C. - Komninou, Ph.
Lattice-mismatched epitaxial growth on porous III-V substrates.
ECS Transactions. Vol. 58. Pennington: Electrochemical Society, 2013, s. 53-60. ISSN 1938-5862.
[224th ECS Meeting. San Francisco (US), 27.10.2013-28.10.2013]
Institucionální podpora: RVO:67985882 ; RVO:68378271
Klíčová slova: Epitaxial growth * Gallium alloys * Metallorganic vapor phase epitaxy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika; BM - Fyzika pevných látek a magnetismus (FZU-D)

We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with lattice mismatched In(x)Ga(1-x)As layers
Trvalý link: http://hdl.handle.net/11104/0241026