Growth of adlayers studied by fluorination of isotopically engineered graphene

0438494 - ÚFCH JH 2015 RIV DE eng J - Článek v odborném periodiku
Ek Weis, Johan - da Costa, Sara - Frank, Otakar - Kalbáč, Martin
Growth of adlayers studied by fluorination of isotopically engineered graphene.
Physica Status Solidi B. Roč. 251, č. 12 (2014), s. 2505-2508. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA MŠMT LH13022
Institucionální podpora: RVO:61388955
Klíčová slova: chemical vapor deposition * graphene * isotope labeling
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 1.469, rok: 2014

Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs to those, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insight into the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer.
Trvalý link: http://hdl.handle.net/11104/0241874