Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

0448214 - FZÚ 2016 RIV CH eng J - Článek v odborném periodiku
Mortet, Vincent - Pernot, J. - Jomard, F. - Soltani, A. - Remeš, Zdeněk - Barjon, J. - D´Haen, J. - Haenen, K.
Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates.
Diamond and Related Materials. Roč. 35, Mar (2015), s. 29-34. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR GA13-31783S
Grant ostatní: EU(XE) CZ.1.07/2.3.00/20.0306
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * boron * doping * crystalline orientation
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.125, rok: 2015

Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppmin the gas phase. The surface of the diamond layers observed by scanning electronmicroscopy consists of(100) and (113)micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. Amaximummobility of 528 cm2 V−1 s−1 wasmeasured at roomtemperature for a charge carrier concentration of 1.1 1013 cm−3. Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates.
Trvalý link: http://hdl.handle.net/11104/0249965