Počet záznamů: 1
InGaN/GaN multiple quantum well structures for detectors
- 1.0449778 - FZÚ 2016 CZ eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Brůža, P. - Pánek, D. - Foltynski, B. - Beitlerová, Alena - Heuken, M.
InGaN/GaN multiple quantum well structures for detectors.
NANOCON 2015 Proceedings of Abstracts. Ostrava: TANGER Ltd., 2015. s. 29-29. ISBN 978-80-87294-59-8.
[NANOCON 2015. International Conference /7./. 14.10.2015-16.10.2015, Brno]
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN * GaN * MQW * scintillator
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
InGaN/GaN MQW structures were prepared by MOVPE and characterized them by fine X-ray diffracion measurements. We demostrate their suitability for scintillator application. The PL and RL were also measured.
Trvalý link: http://hdl.handle.net/11104/0251229
Počet záznamů: 1