Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

0468766 - FZÚ 2017 RIV CH eng J - Článek v odborném periodiku
Tkachenko, V. - Medvedev, Nikita - Ziaja, B.
Transient changes of optical properties in semiconductors in response to femtosecond laser pulses.
Applied Sciences-Basel. Roč. 6, č. 9 (2016), 1-12, č. článku 238. E-ISSN 2076-3417
Institucionální podpora: RVO:68378271
Klíčová slova: free-electron lasers * transient optical properties
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.679, rok: 2016

We present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal Transitions (XTANT) can currently treat semiconductors irradiated with soft to hard X-ray fs pulses. During the excitation and relaxation of solids, their optical properties such as reflectivity, transmission and absorption, are changing, affected by transient electron excitation and, at sufficiently high dose, by atomic relocations. We report how the transient optical properties can be used for diagnostics of electronic and structural transitions occurring in irradiated semiconductors. The presented methodology for calculation of the complex dielectric function applied in XTANT proves to be capable of describing changes in the optical parameters, when the solids are driven out of equilibrium by intense laser pulses. Comparison of model predictions with the existing experimental data shows a good agreement.
Trvalý link: http://hdl.handle.net/11104/0266592