WO.sub.3./sub. thin films prepared by sedimentation and plasma sputtering

0474060 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Olejníček, Jiří - Brunclíková, Michaela - Kment, Š. - Hubička, Zdeněk - Kmentová, N. - Kšírová, Petra - Čada, Martin - Zlámal, M. - Krýsa, J.
WO₃ thin films prepared by sedimentation and plasma sputtering.
Chemical Engineering Journal. Roč. 318, Jun (2017), s. 281-288. ISSN 1385-8947. E-ISSN 1873-3212
Grant CEP: GA TA ČR(CZ) TF01000084; GA ČR(CZ) GA15-00863S; GA TA ČR TA03010743; GA ČR GAP108/12/2104
Institucionální podpora: RVO:68378271
Klíčová slova: WO₃ * thin films * water splitting * pulsed magnetron sputtering * sedimentation * photo-electro-chemistry
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 6.735, rok: 2017

Tungsten trioxide (WO3) semiconducting thin films were prepared by (i) sedimentation process, (ii) reactive magnetron sputtering from tungsten target under various modes of plasma excitation and (iii) combination of both methods. All samples were deposited on FTO (fluorine-doped tin oxide) coated glass substrate and were annealed after deposition under open air conditions in 450 C in order to improve their crystallinity and semiconductor properties. This study deals with a comparison of photo-electrochemical properties of the layers prepared by the methods mentioned above. After annealing, all the prepared WO3 films revealed monoclinic crystalline structure while the as-deposited samples were amorphous. Different orientation of crystallites was found for different mode of discharge pulsing in plasma prepared samples. The presence of crystalline WO3 is essential for significant photocurrent response.
Trvalý link: http://hdl.handle.net/11104/0271156