Origin of Bi.sup.3+./sup.–related luminescence in Gd.sub.3./sub.Ga.sub.5./sub.O.sub.12./sub.:Bi epitaxial films

0476233 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Krasnikov, A. - Luchechko, A. - Mihóková, Eva - Nikl, Martin - Syvorotka, I. I. - Zazubovich, S. - Zhydachevskii, Ya.
Origin of Bi³⁺–related luminescence in Gd₃Ga₅O₁₂:Bi epitaxial films.
Journal of Luminescence. Roč. 190, Oct (2017), s. 81-88. ISSN 0022-2313. E-ISSN 1872-7883
Grant CEP: GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: photoluminescence * epitaxial films * gadolinium gallium garnet * Bi³⁺ * energy transfer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.732, rok: 2017

Photoluminescence characteristics of Gd3Ga5O12:Bi single crystalline films with different Bi contents grown by the liquid phase epitaxy are studied by the steady-state and time-resolved luminescence spectroscopy methods in the 4.2–500 K temperature range under excitation within the 3.8–6.0 eV. No ultraviolet emission, which could be ascribed to the radiative decay of the triplet excited state of Bi3+, is observed. Only visible emission is shown to arise from the Bi3+–related luminescence centers. Both the intense 2.54 eV emission and the weaker 2.46 eV emission of Gd3Ga5O12:Bi are shown to be of exciton origin. The characteristic parameters of the corresponding exciton states are determined. The photostimulated processes, resulting in the localized excitons formation under excitation in the Bi3+–related absorption bands, are discussed.
Trvalý link: http://hdl.handle.net/11104/0272784