Multilevel resistive switching in Cu and Ag doped CBRAM device

0493358 - ÚMCH 2019 RIV NL eng J - Článek v odborném periodiku
Zhang, B. - Zima, Vítězslav - Mikysek, T. - Podzemná, V. - Rozsíval, P. - Wágner, T.
Multilevel resistive switching in Cu and Ag doped CBRAM device.
Journal of Materials Science-Materials in Electronics. Roč. 29, č. 19 (2018), s. 16836-16841. ISSN 0957-4522. E-ISSN 1573-482X
Institucionální podpora: RVO:61389013
Klíčová slova: resistive switching * memory device * materials for energy
Obor OECD: Inorganic and nuclear chemistry
Impakt faktor: 2.195, rok: 2018

A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as “one pulse SET method”. The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.
Trvalý link: http://hdl.handle.net/11104/0287314