Technological possibilities and vacuum systems for deposition of Si:H thin films with embedded nanoparticles

0502002 - FZÚ 2019 CZ eng A - Abstrakt
Stuchlík, Jiří - Stuchlíková, The-Ha - Fajgar, Radek - Kupčík, Jaroslav - Remeš, Zdeněk
Technological possibilities and vacuum systems for deposition of Si:H thin films with embedded nanoparticles.
Book of Abstracts of the 28th Joint Seminar Development of Materials Science in Research and Education. Praha: Institute of Physics of the Czech Academy of Sciences, 2018 - (Kožíšek, Z.; Král, R.; Zemenová, P.). s. 53-53. ISBN 978-80-905962-8-3.
[Joint Seminar Development of Materials Science in Research and Education /28./. 03.09.2018-07.09.2018, Pavlov]
Grant CEP: GA MŠMT(CZ) LTC17029
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: a-Si:H * PIN diode * thin films * nanoparticles
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (UCHP-M)

For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. For the development of effective solar cells the long-time efforts were focused on the group 4 of the periodic table of elements, i.e. C, Si, Ge and their eventual alloys.

Trvalý link: http://hdl.handle.net/11104/0293962