Optimization of a multiphysics problem in semiconductor laser design

0501588 - ÚTIA 2020 RIV US eng J - Článek v odborném periodiku
Adam, Lukáš - Hintermüller, M. - Peschka, D. - Surowiec, T.
Optimization of a multiphysics problem in semiconductor laser design.
Siam Journal on Applied Mathematics. Roč. 79, č. 1 (2019), s. 257-283. ISSN 0036-1399. E-ISSN 1095-712X
Institucionální podpora: RVO:67985556
Klíčová slova: optoelectronics * semiconductor laser * strained germanium microbridges * van Roosbroeck * phase field * design optimization * topology optimization * PDE-constrained optimization
Obor OECD: Pure mathematics
Impakt faktor: 1.551, rok: 2019
Způsob publikování: Omezený přístup
http://library.utia.cas.cz/separaty/2019/MTR/adam-0501588.pdf https://epubs.siam.org/doi/abs/10.1137/18M1179183

A multimaterial topology optimization framework using phase elds is suggested for the simultaneous optimization of mechanical and optical properties to be used in the development of optoelectronic devices. The technique provides a means of determining the cross section of the material alignments needed to create a sufficiently large strain pro le within an optically active region of a photonic device. Based on the physical aspects of the underlying device, a nonlinear multiphysics model for the elastic and optical properties is proposed in the form of a linear elliptic partial differential equation (elasticity) coupled via the underlying topology to an eigenvalue problem of Helmholtz type (optics). The differential sensitivity of the displacement and eigenfunctions with respect to the changes in the underlying topology is investigated. After proving existence and optimality results, numerical experiments leading to an optimal material distribution for maximizing the strain in a Ge-on-Si microbridge are given. The presence of a net gain at low voltages for the optimal design is demonstrated by solving the steady-state van Roosbroeck (drift-diffusion) system, which proves the viability of the approach for the development of next-generation photonic devices.
Trvalý link: http://hdl.handle.net/11104/0294167