Electronic properties of GaAsBi(001) alloys at low Bi content

0509391 - FZÚ 2020 RIV US eng J - Článek v odborném periodiku
Honolka, Jan - Hogan, C. - Vondráček, Martin - Polyak, Yaroslav - Arciprete, F. - Placidi, E.
Electronic properties of GaAsBi(001) alloys at low Bi content.
Physical Review Materials. Roč. 3, Apr (2019), s. 1-14, č. článku 044601. ISSN 2475-9953. E-ISSN 2475-9953
Grant CEP: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institucionální podpora: RVO:68378271
Klíčová slova: ARPES * GaAsBi * DFT * photoemission spectroscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.337, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1103/physrevmaterials.3.044601

We present an in-depth investigation of structural and electronic properties of GaAsBi epilayers. High (001)crystalline order is achieved using careful molecular beam epitaxy and surface preparation procedures. High surface order allows us to use x-ray, ultraviolet, and angle-resolved photoemission spectroscopy at variable photon energies and to disentangle electronic effects of an atomically thin Bi-rich surface layer with (2 × 3) symmetry from those of Bi atoms incorporated in the GaAs bulk matrix. The influence of bulk-integrated Bi concentrations on the GaAs band structure becomes visible in angle-resolved photoemission after removing Bi-rich surface layers by a brief and mild ion bombardment and subsequent annealing treatment. Experimental observations are supported by density functional theory simulations of the valence band structure of bulk and surface-reconstructed GaAs with and without Bi.

Trvalý link: http://hdl.handle.net/11104/0300167