Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

0521379 - FZÚ 2020 RIV US eng J - Článek v odborném periodiku
Šilhavík, Martin - Müller, Martin - Stuchlík, Jiří - Stuchlíková, The-Ha - Klementová, Mariana - Kočka, Jan - Fejfar, Antonín - Červenka, Jiří
Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires.
Applied Physics Letters. Roč. 114, č. 13 (2019), s. 1-5, č. článku 132103. ISSN 0003-6951. E-ISSN 1077-3118
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA16-12355S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nanowires * PECVD * catalyst doping
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.597, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1063/1.5086617

Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components
Trvalý link: http://hdl.handle.net/11104/0306012