GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering

0536206 - FZÚ 2021 RIV NL eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Gordeev, Ivan - Paszuk, A. - Supplie, O. - Stoeckmann, J.P. - Houdková, Jana - Ukraintsev, Egor - Bartoš, Igor - Jiříček, Petr - Hannappel, T.
GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering.
Applied Surface Science. Roč. 514, Jun (2020), s. 1-8, č. článku 145903. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) LM2015088; GA ČR GC18-06970J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: GaP/Si heterostructure * buried interface analysis * XPS * depth profiling * gas cluster ion beam sputtering * interface core level shifts
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.707, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2020.145903

THere we applied gas cluster ion beam sputtering in combination with in-situ XPS (GCIB-XPS) to analyze buried GaP/Si(001) heterointerfaces. The GCIB method was used to dig a crater into the 20 nm thick GaP(001) film. We found optimal parameters for GCIB sputtering and achieved interface layers without severe damage. Destructive effects, i.e. broadening of core level peaks, could not be completely avoided, however, and the formation of metallic Ga on the GaP surface was observed. Photoemission spectra of the sputtered heterostructures were compared with corresponding reference spectra of sputtered bulk crystals. Interface contributions to the intensity of phosphorus and sillicon core level peaks were revealed. Similar results were obtained on 4 nm thick GaP/Si(001) by XPS. Finally, a top-to-bottom concept for buried semiconductor interfaces studies by GCIB-XPS is demonstrated.
Trvalý link: http://hdl.handle.net/11104/0314015